symbol v ds v gs i dm a i d units parameter 100 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) typ 100v 30a 24 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. to-252 and to-251 package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous -pulsed a c a www.samhop.com.tw apr,22,2015 1 details are subject to change without notice. t c =25 c w p d c -55 to 150 t c =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja 2.4 c/w thermal resistance, junction-to-case r jc t c =70 c a t c =70 c w 30 88 52 24 33 s mhop microelectronics c orp. a ver 2.0 stu30n10 STD30N10 green product c e as mj single pulse avalanche energy d 144 g s stu series to-252aa(d-pa) std series to-251(i-pa) g s d
symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) v 24 g fs s c iss 1100 pf c oss 150 pf c rss 99 pf q g 32 nc 35 18 28 t d(on) 16 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =50v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =15a v ds =10v , i d =15a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =80v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 30 b f=1.0mhz b www.samhop.com.tw apr,22,2015 2 v sd nc q gs nc q gd 2.6 4.7 gate-drain charge gate-source charge diode forward voltage v ds =50v,i d =15a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =5a 0.77 1.3 v v ds =50v,i d =15a,v gs =10v 234 38 stu30n10 STD30N10 ver 2.0 notes a.pulse test:pulse width < 10us, duty cycle < 1%. b.guaranteed by design, not subject to production testing. c.drain current limited by maximum junction temperature. d.starting t j =25 c,l=0.5mh,v dd = 50v.(see figure13) e.mounted on fr4 board of 1 inch 2 , 2oz. _ _
www.samhop.com.tw apr,22,2015 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 60 40 30 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =10v 30 24 18 12 6 0 0 1 6 5 4 3 2 tj=125 c -55 c 25 c 60 50 40 30 20 10 1 2.5 2.2 1.9 1.6 1.3 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =15a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 10 v gs =6v v gs =5v 60 40 30 20 10 1 stu30n10 STD30N10 ver 2.0 50 v gs =10v 50 v gs =7v
www.samhop.com.tw apr,22,2015 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 90 75 60 45 30 15 0 10 0 125 c 75 c 25 c i d =15a 10 1 20 ciss coss crss 1200 1000 800 600 400 200 0 10 15 20 25 30 0 5 0.1 1 10 100 100 10 1 0.3 r ds ( on ) l imi t v gs =10v single pulse t c =25 c d c 10ms 1ms 10 0u s 10us 10 8 6 4 2 0 v ds =50v i d =15a 8 6 4 2 0 1.25 1.00 0.75 0.50 0.25 25 c 75 c 125 c stu30n10 STD30N10 ver 2.0 0 2 468 10 12 14 16 switching time(ns) rg, gate resistance( ) figure 11. switching characteristics 110 100 1 10 100 300 vds=50v,id=1a vgs=10v td(on) t r td(off ) tf
t p v (br )dss i as figure 13b. www.samhop.com.tw apr,22,2015 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r j ja (t)=r (t) * r j ja 2. r j ja =s ee datas heet 3. t jm- t a =p dm *r j ja (t) 4. duty cycle, d=t 1 /t 2 single pulse unclamped inductive waveforms figure 13a. unclamped inductive test circuit r g i as 0.01 t p d.u.t l v ds + - dd 20v v stu30n10 STD30N10 ver 2.0
ver 2.0 www.samhop.com.tw apr,22,2015 6 to-252 l3 b2 b l2 l a1 l1 a max min c c2 d d1 e h e1 millimeters symbols e b3 e b3 h l3 d l4 b2 b e 1 2 3 a c2 c e1 d1 l1 a1 l2 detail "a" detail "a" 2.200 2.380 0.000 0.127 0.635 0.889 0.762 1.143 5.200 5.460 0.450 0.600 0.450 0.580 6.000 6.223 5.210 2.286 bsc 6.400 6.731 4.318 9.400 10.400 l4 1.400 1.770 2.743 ref l 0.508 bsc 0.890 1.270 0.640 1.010 0 10 4.900 5.380 stu30n10 STD30N10
www.samhop.com.tw 7 package outline dimensions to-251 b3 d e d1 12 3 l4 e l5 h b4 b2 b e1 a c2 l c symbol millimeters min max e 6.350 6.731 l 3.700 4.400 l4 0.698 ref l5 0.972 1.226 5.970 d6.223 h 9.670 11.450 b 0.630 0.850 b2 0.760 1.140 4.950 b3 5.460 b4 0.450 0.550 e 2.286 bsc a 2.180 2.390 c 0.400 0.610 0.400 0.610 c2 d1 5.100 e1 4.318 ver 2.0 apr,22,2015 stu30n10 STD30N10
www.samhop.com.tw apr,22,2015 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 - 0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 - 0 2.2 ? 13.0 + 0.5 - 0.2 10.6 2.0 2 0.5 " a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h stu30n10 STD30N10 ver 2.0
www.samhop.com.tw 9 top marking definition to-252 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) stu30n10 smc internal code no. (a,b,c...z) ver 2.0 stu30n10 STD30N10 apr,22,2015
www.samhop.com.tw 10 top marking definition to-251 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) STD30N10 smc internal code no. (a,b,c...z) ver 2.0 apr,22,2015 stu30n10 STD30N10
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